參數(shù)資料
型號(hào): CM100DU-24NFH
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI IGBT MODULES
中文描述: 三菱IGBT模塊
文件頁數(shù): 3/4頁
文件大?。?/td> 67K
代理商: CM100DU-24NFH
Feb.2004
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
14
10
–1
10
0
10
1
10
2
2
3
5
7
2
3
5
7
2
3
5
7
10
–1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
V
GE
= 0V
C
ies
C
oes
C
res
0
5
10
15
20
V
CE
= 10V
0
1
6
7
8
9
2
3
4
5
0
40
80
160
200
120
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
200
V
GE
=20
(V)
T
j
= 25
°
C
12
9
8
11
10
13
0
2
4
6
8
10
6
10
14
18
8
12
16
20
T
j
= 25
°
C
I
C
= 200A
I
C
= 100A
I
C
= 40A
10
1
10
2
2
3
5
7
0
1
2
4
3
5
10
3
2
3
5
7
T
j
= 25
°
C
T
j
= 125
°
C
15
T
j
= 25
°
C
T
j
= 125
°
C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
C
i
,
o
,
r
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
S
C
GATE-EMITTER VOLTAGE V
GE
(V)
PERFORMANCE CURVES
相關(guān)PDF資料
PDF描述
CM100DUS-12F HIGH POWER SWITCHING USE
CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE
CM100DY-12H Dual IGBTMOD 100 Amperes/600 Volts
CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE
CM100DY-24H Dual IGBTMOD 100 Amperes/1200 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100DU-24NFH_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100DU-24NFH_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE
CM100DU-34KA 功能描述:IGBT MOD DUAL 1700V 100A KA SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM100DU-34KA_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100DU-34KA_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE