參數(shù)資料
型號(hào)： CM100DU-24NFH
廠商： Mitsubishi Electric Corporation
英文描述： MITSUBISHI IGBT MODULES
中文描述： 三菱IGBT模塊
文件頁數(shù)： 2/4頁
文件大?。?/td> 67K
代理商： CM100DU-24NFH
Feb.2004
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE1
= V
GE2
= 15V
R
G
= 3.1
, Inductive load switching operation
I
E
= 100A
I
E
= 100A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
*2
(1/2 module)
IGBT part (1/2 module)
FWDi part (1/2 module)
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
±
20
100
200
100
200
560
730
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
W
°
C
°
C
V
N m
N m
g
1
0.5
6.5
—
16
1.3
0.3
—
100
50
250
150
150
—
3.5
0.22
0.47
—
0.17
*3
0.29
*3
31
mA
μ
A
nF
nF
nF
nC
ns
ns
ns
ns
ns
μ
C
V
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
—
—
5.0
5.0
—
—
—
450
—
—
—
—
—
5.0
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6
V
V
4.5
7.5
Gate-emitter threshold voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (
Note 1
)
Q
rr (
Note 1
)
V
EC(
Note 1
)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
th(j-c’)
R
R
G
*
1 : T
C
measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
*
4 : T
C
’ measured point is just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. No short circuit capability is designed.
Symbol
Parameter
V
GE(th)
V
CE(sat)
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
T
C
= 25
°
C
T
C
’ = 25
°
C
*4
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note 1
)
I
EM (
Note 1
)
P
C (
Note 3
)
P
C
’
(
Note 3
)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector current
Emitter current
Mounting torque
Conditions
Unit
Ratings
Unit
Typ.
Limits
Min.
Max.
Test conditions
MAXIMUM RATINGS
(Tj = 25
°
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Collector cutoff current
Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
*4
External gate resistance
相關(guān)PDF資料
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CM100DUS-12F HIGH POWER SWITCHING USE
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CM100DY-24H Dual IGBTMOD 100 Amperes/1200 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100DU-24NFH_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100DU-24NFH_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE
CM100DU-34KA 功能描述:IGBT MOD DUAL 1700V 100A KA SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM100DU-34KA_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100DU-34KA_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE
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