參數(shù)資料
型號: CEM11C2
廠商: Chino-Excel Technology Corp.
英文描述: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
中文描述: 雙增強模式場效應(yīng)晶體管(N和P溝道)
文件頁數(shù): 5/9頁
文件大小: 59K
代理商: CEM11C2
CEM11C2
5
N-Channel
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
-
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
30.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=-250
A
12
9
6
3
15
0
0
5
10
15
20
V
DS
=15V
5-152
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
5
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