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參數(shù)資料
| 型號(hào)： | CEM11C2 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | Dual Enhancement Mode Field Effect Transistor (N and P Channel) |
| 中文描述： | 雙增強(qiáng)模式場(chǎng)效應(yīng)晶體管（N和P溝道） |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | CEM11C2 |
CEM11C2
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 2A
V
GS
= 0V, Is =-1.8A
N-Ch
P-Ch
0.76
-0.80
1.1
-1.0
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
N-Channel
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
R
D
,
I
D
,
I
D
,
-55 C
25 C
30
24
18
12
6
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Tj=125 C
5-151
5
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,7,6,5V
V
GS
=4V
V
GS
=3V
Tj=125 C
25 C
-55 C
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
V
GS
=10V
0
5
10
15
20
25
30
Ciss
Coss
Crss
1800
1500
1200
900
600
300
0
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CEM11M2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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