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參數(shù)資料
| 型號： | CEM11C2 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | Dual Enhancement Mode Field Effect Transistor (N and P Channel) |
| 中文描述： | 雙增強模式場效應(yīng)晶體管（N和P溝道） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CEM11C2 |
CEM11C2
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=
0V,I
D =
250
μ
A
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30V, V
GS
=
0V
1
μ
A
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
=
20V, V
DS
=
0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=
V
GS
, I
D
=
250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=
10V, I
D
=
7A
24
30
m
m
V
GS
=
4.5V, I
D
=
3.5A
32
42
On-State Drain Current
I
D(ON)
g
V
DS
=
5V, V
GS
=
10V
30
8
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=
15V, I
D
=
7A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
804
P
F
328
P
F
P
F
79
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 25V,
I
D
= 1A,
V
GS
= 10V,
R
GEN
= 6
16
24
ns
ns
ns
ns
7
14
60
47
10
15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 2A,
V
GS
=10V
20
24
nC
nC
nC
3
6
C
Fall Time
5-149
5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CEM11M2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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