參數(shù)資料
型號(hào)： CEM11C2
廠(chǎng)商： Chino-Excel Technology Corp.
英文描述： Dual Enhancement Mode Field Effect Transistor (N and P Channel)
中文描述： 雙增強(qiáng)模式場(chǎng)效應(yīng)晶體管（N和P溝道）
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 59K
代理商： CEM11C2
CEM11C2
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=
0V, I
D =
-250
μ
A
V
DS
=
-16V,V
GS
=
0V
-20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
-1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
=
8
V, V
DS
=
0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=
V
GS
, I
D
=
-250
μ
A
-0.6
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=
-4.5V,I
D
=
-2.2A
50
90
m
m
V
GS
=
-2.5V,I
D
=
-1.8A
80
120
On-State Drain Current
I
D(ON)
g
V
DS
=
-5V, V
GS
=
-4.5V
-20
4
6
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=
-16V,I
D
=
-2.2A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
1430
P
F
800
P
F
P
F
325
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= -2.2A,
V
GEN
= - 4.5V,
R
GEN
= 6
20
21
28
ns
ns
ns
ns
30
76
106
56
78
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-6V, I
D
= -2.2A,
V
GS
=-4.5V
19.4
25
nC
nC
nC
3
5
C
Fall Time
-1.5
5-150
5
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