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參數(shù)資料
| 型號： | BYD1100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Hyper fast soft-recovery rectifier |
| 中文描述： | 0.85 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 62K |
| 代理商： | BYD1100 |
1999 Nov 16
5
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
BYD1100
T
tp
= 105
°
C; R
th j-tp
= 30 K/W; V
R
= V
RRMmax
during 1
δ
; curves include derating for T
j max
at V
RRM
= 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
IFRM
(A)
0
10
2
12
4
16
8
MGR571
10
1
1
10
10
2
10
3
10
4
tp (ms)
δ
= 0.05
0.1
0.5
0.2
1
T
amb
= 60
°
C; R
th j-a
= 150 K/W; V
R
= V
RRMmax
during 1
δ
; curves include derating for T
j max
at V
RRM
= 100 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
IFRM
(A)
0
10
2
2
4
6
8
MGR570
10
1
1
10
10
2
10
3
10
4
tp (ms)
δ
= 0.05
0.1
0.5
0.2
1
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