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參數(shù)資料
| 型號(hào)： | BYD1100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Hyper fast soft-recovery rectifier |
| 中文描述： | 0.85 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | BYD1100 |
1999 Nov 16
3
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
BYD1100
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.12.
For more information please refer to the ‘General Part of associated Handbook’
SYMBOL
PARAMETER
CONDITIONS
MIN.
120
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
0.735 V
0.96
V
V
V
(BR)R
reverse avalanche breakdown
voltage
reverse current
I
R
V
R
= V
RRMmax
; see Fig.8
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.8
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.10
f = 1 MHz; V
R
= 0; see Fig.9
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
1 A/
μ
s; see Fig.11
5
μ
A
μ
A
150
t
rr
reverse recovery time
10
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
70
pF
A/
μ
s
2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
150
K/W
K/W
note 1
--------
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