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參數(shù)資料
| 型號： | BYD1100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Hyper fast soft-recovery rectifier |
| 中文描述： | 0.85 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BYD1100 |
1999 Nov 16
2
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
BYD1100
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Smallest surface mount rectifier
outline
Shipped in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
100
100
2.7
V
V
A
T
tp
= 55
°
C; averaged over any
20 ms period; see Figs.2 and 4
T
tp
= 110
°
C; averaged over any
20 ms period; see Figs.2 and 4
T
amb
= 60
°
C; printed-circuit board
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4
T
tp
= 105
°
C; see Fig.6
T
amb
= 60
°
C; see Fig.7
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
1.7
A
0.85 A
I
FRM
repetitive peak forward current
16
8
15
A
A
A
I
FSM
non-repetitive peak forward current
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
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