參數(shù)資料
型號: BYD1100
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hyper fast soft-recovery rectifier
中文描述: 0.85 A, 100 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 4/12頁
文件大?。?/td> 62K
代理商: BYD1100
1999 Nov 16
4
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
BYD1100
GRAPHICAL DATA
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Fig.2
Maximum permissible average forward
currentasafunctionoftie-pointtemperature
(including losses due to reverse leakage).
handbook, halfpage
IF(AV)
(A)
0
200
0
1
MGR567
2
3
40
80
120
160
Ttp (
°
C)
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Device mounted as shown in Fig.12.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
(A)
0
200
0
0.4
MGR566
0.8
1.2
1.6
40
80
120
160
Tamb (
°
C)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a = I
F(RMS)
/I
F(AV)
;
δ
= 0.5; V
R
= V
RRMmax
.
handbook, halfpage
P
(W)
0
2.0
IF(AV) (A)
0
0.4
0.8
1.2
1.6
0.4
0.8
1.2
1.6
MBK899
a = 3
2.5
2
1.57
1.42
Dotted line: T
j
= 175
°
C.
Solid line: T
j
= 25
°
C.
Fig.5
Maximum forward voltage as a function of
forward current.
handbook, halfpage
(A)
0
1
2
4
0
16
MGR563
3
12
8
4
VF (V)
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