參數(shù)資料
型號(hào): BUK9907-40ATC
英文描述: TrenchPLUS logic level FET
中文描述: TrenchPLUS場(chǎng)效應(yīng)晶體管邏輯電平
文件頁數(shù): 9/15頁
文件大?。?/td> 355K
代理商: BUK9907-40ATC
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
Product data
Rev. 01 — 28 January 2002
9 of 15
9397 750 09139
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= V
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C; V
DS
= 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03na17
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
Tj (oC)
180
max
typ
min
VGS(th)
(V)
03na18
0
0.5
1
1.5
2
2.5
VGS (V)
3
max
typ
min
ID
(A)
10-6
10-5
10-4
10-3
10-2
10-1
03ne81
0
20
40
60
80
100
120
140
0
20
40
60
80
100
I
D
(A)
g
fs
(S)
03ne86
0
2000
4000
6000
8000
10000
12000
14000
16000
C (pF)
10-2
10
-1
1
10
10
2
V
DS
(V)
Ciss
Coss
Crss
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