參數(shù)資料
型號(hào)： BUK9907-40ATC
英文描述： TrenchPLUS logic level FET
中文描述： TrenchPLUS場(chǎng)效應(yīng)晶體管邏輯電平
文件頁(yè)數(shù)： 3/15頁(yè)
文件大小： 355K
代理商： BUK9907-40ATC
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
Product data
Rev. 01 — 28 January 2002
3 of 15
9397 750 09139
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6.
Limiting values
[1]
[2]
[3]
Voltage is limited by clamping
Current is limited by power dissipation chip rating
Continuous current is limited by package.
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage (DC)
V
DGS
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
-
-
-
Max
40
40
±
15
140
75
75
560
Unit
V
V
V
A
A
A
A
[1]
I
DG
= 250
μ
A
[1]
[1]
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
[2]
[3]
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
t
p
= 5 ms;
δ
= 0.01
continuous
t
p
= 5 ms;
δ
= 0.01
[3]
I
DM
drain current (peak value)
P
tot
I
DG(CL)
I
GS(CL)
total power dissipation
drain-gate clamping current
gate-source clamping current
-
-
-
-
-
272
50
10
50
±
100
W
mA
mA
mA
V
V
isol(FET-TSD)
FET to temperature sense diode
isolation voltage
T
stg
storage temperature
T
j
operating junction temperature
Source-drain diode
I
DR
reverse drain current (DC)
55
55
+175
+175
°
C
°
C
T
mb
= 25
°
C
[2]
-
-
-
140
75
560
A
A
A
[3]
I
DRM
Clamping
E
DS(CL)S
pulsed reverse drain current
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
non-repetitive drain-source
clamping energy
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 5 V; R
GS
= 10 k
;
starting T
j
= 25
°
C
-
1.4
J
Electrostatic Discharge
V
esd
electrostatic discharge voltage;
pins 1,3,5
Human Body Model; C = 100 pF;
R = 1.5 k
-
6
kV
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