參數(shù)資料
型號: BUK9907-40ATC
英文描述: TrenchPLUS logic level FET
中文描述: TrenchPLUS場效應晶體管邏輯電平
文件頁數(shù): 1/15頁
文件大?。?/td> 355K
代理商: BUK9907-40ATC
BUK9907-40ATC
TrenchPLUS logic level FET
Rev. 01 — 28 January 2002
Product data
M3D745
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9907-40ATC in SOT263B.
2.
Features
I
Typical on-state resistance 5.8 m
I
Q101 compliant
I
ESD and overvoltage protection
I
Monolithically integrated temperature sensor for overload protection.
3.
Applications
I
Automotive and power switching:
N
12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
N
Protected drive for lamps.
4.
Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT263B simplified outline and symbol
Description
gate (g)
anode (a)
drain (d)
cathode (k)
source (s)
mounting base;
connected to drain (d)
Simplified outline
Symbol
SOT263B
1
5
mb
MBL263
MBL306
d
a
s
k
g
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相關代理商/技術參數(shù)
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BUK9907-55ATE 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9907-55ATE,127 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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