參數(shù)資料
型號(hào)： BUK9907-40ATC
英文描述： TrenchPLUS logic level FET
中文描述： TrenchPLUS場(chǎng)效應(yīng)晶體管邏輯電平
文件頁(yè)數(shù)： 6/15頁(yè)
文件大?。?/td> 355K
代理商： BUK9907-40ATC
Philips Semiconductors
BUK9907-40ATC
TrenchPLUS logic level FET
Product data
Rev. 01 — 28 January 2002
6 of 15
9397 750 09139
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DG
drain-gate zener breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
40
40
-
-
-
-
V
V
T
j
=
55
°
C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
1
0.5
1.5
-
-
2
-
2.3
V
V
V
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 40 V; V
GS
= 0 V
I
DSS
drain-source leakage current
-
-
12
0.1
-
15
100
250
-
μ
A
μ
A
V
T
j
= 175
°
C
I
G
=
±
1 mA;
55
°
C < T
j
< 175
°
C
V
GS
=
±
5 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 50 A;
Figure 7
and
8
V
(BR)GSS
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
I
GSS
R
DSon
-
5
1000
nA
-
-
-
-
648
5.8
6
5.2
658
7
14
7.7
6.2
668
m
m
m
m
mV
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 50 A
V
GS
= 10 V; I
D
= 50 A
I
F
= 250
μ
A
V
F
temperature sense diode
forward voltage
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage hysteresis
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
S
F
I
F
= 250
μ
A;
55
°
C < T
j
< 175
°
C
125
μ
A < I
F
< 250
μ
A
1.4
1.54
1.68
mV/K
V
hys
25
32
50
mV
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
-
-
-
-
-
-
-
5836
958
595
3
10
17
11
2.5
-
-
-
-
-
-
-
-
pF
pF
pF
μ
s
μ
s
μ
s
μ
s
nH
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 1 k
measured from upper edge
of drain mounting base to
centre of die
measured from source lead
to source bond pad
L
s
internal source inductance
-
7.5
-
nH
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