參數(shù)資料
型號(hào): BUK9120-48TC
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(帶溫度感應(yīng)二極管的功率MOS鉗位電壓邏輯電平場(chǎng)效應(yīng)管)
中文描述: 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 85K
代理商: BUK9120-48TC
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
BUK9120-48TC
Fig.9. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.10. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.11. Typical clamping voltage
V
(CL)DSR
= f(I
D
); conditions: R
G
= 10 kOhm
Fig.12. Typical clamping voltage
V
(CL)DSR
= f(R
G
); conditions: I
D
= 10 A
Fig.13. Typical Vf of sense diodes
Vf = f(K); parameter I
f
Fig.14. Typical Vf temperature coefficient
Vf Temp.Coef.= f(K); conditions: I
F
= 250 uA
0
1
2
3
4
5
6
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175
25
0
5
10
15
43
44
45
46
47
48
49
50V(CL)DSR/V
RG/kOhm
Tmb / degC =
175
25
-55
0
20
40
60
80
100
0
10
20
30
40
50
gfs/S
ID/A
-50
0
50
Diode Temperature /C
100
150
200
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Vf/V
If/uA =
500
250
100
50
25
0
2
4
6
8
10
12
40
41
42
43
44
45
46
47
48V(CL)DSR/V
ID/A
Tmb / degC =
175
25
-55
0
50
150
-1.55
-1.5
-1.45
-1.4
-1.35
-1.3
-1.25Vf Temperature Coefficient / mV/K
Diode Temperat100
February 1998
5
Rev 1.100
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