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參數(shù)資料
| 型號： | BUK9120-48TC |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(帶溫度感應(yīng)二極管的功率MOS鉗位電壓邏輯電平場效應(yīng)管) |
| 中文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 85K |
| 代理商： | BUK9120-48TC |
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET
with temperature sensing diodes
BUK9120-48TC
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Protected N-channel enhancement
mode logic level field-effect power
transistor
in
a
suitable for surface mounting. Using
’trench’
technology
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV and active
drainvoltageclamping.Temperature
sensitive diodes are incorporated for
monitoring chip temperature.
The device is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MIN.
TYP
.
MAX.
UNIT
plastic envelope
V
(CL)DSR
I
D
P
tot
T
j
R
DS(ON)
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance; V
= 5 V
Forward voltage,temperature
sense diodes
Negative temperature
coefficient, temperature sense
diodes
40
45
55
52
116
175
20
V
A
W
C
m
the
device
V
F
685
710
735
mV
-S
F
1.26
1.4
1.54
mV/K
PINNING - SOT426
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
T1
3
(connected to mb)
4
T2
5
source
Fig. 1.
Fig. 2.
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DG
±
V
GS
I
D
I
D
I
D
I
DM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Drain-gate clamp current
Gate-source clamp current
Source T1/T2 voltage
Storage temperature
Junction temperature
CONDITIONS
continuous
continuous
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 140 C
T
mb
= 25 C
MIN.
-
-
-
-
-
-
-
MAX.
40
38
10
52
37
25
208
UNIT
V
V
V
A
A
A
A
P
tot
I
GD
I
GS
V
TS
T
stg
T
j
T
= 25 C
5ms pulse;
= 0.01
5ms pulse;
= 0.01
-
-
-
-
-
-
-
116
50
50
±
100
175
175
W
mA
mA
V
C
C
- 55
- 55
d
g
s
T1
T2
mb
1 2
4 5
3
February 1998
1
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK9206-40C,118 | 功能描述:MOSFET BUK9206-40C/SOT428/REEL13// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9207-30B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
| BUK9207-30B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9207-30B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9209-40B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
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