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參數(shù)資料
| 型號： | BUK9515-55 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET) |
| 中文描述： | TrenchMOS（商標(biāo)）場效應(yīng)晶體管邏輯電平（TrenchMOS（商標(biāo)）晶體管邏輯電平場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUK9515-55 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9515-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
envelope
technology which features very low
on-state resistance. It is intended for
use
in
automotive
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
using
’
trench
’
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
100
75
230
175
V
A
W
C
and
general
V
GS
= 5 V
V
GS
= 10 V
15
14.4
m
m
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
t
p
≤
50
μ
S
MIN.
-
-
-
-
MAX.
100
100
10
15
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
, T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
75
53
240
230
175
A
A
A
W
C
- 55
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.65
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
December 1998
1
Rev 1.100
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| BUK9515-60E,127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 54A 3-Pin TO-220AB Rail 制造商:NXP Semiconductors 功能描述:BUK9515-60E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 54A TO220AB |
| BUK9516-55A | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9516-55A,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9516-75B | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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