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參數(shù)資料
| 型號： | BUK9120-48TC |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(帶溫度感應二極管的功率MOS鉗位電壓邏輯電平場效應管) |
| 中文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | BUK9120-48TC |
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
BUK9120-48TC
Fig.3. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.4. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.5. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.7. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.8. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-06
0.0001
t/s
1
100
0.001
0.01
0.1
1
10
D =
t
p
t
p
T
T
P
D
t
0.5
0.2
0.1
0.05
0.02
0
Zth/(K/W)
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
50
100
150
ID/A
VDS/V
VGS/V =
5
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
10
8
6
1
10
100
1
10
100
1000
ID/A
VDS/V
RDS(ON) =VDS/ID
DC
tp =
1 us
10us
100 us
1 ms
10ms
100ms
Self Clamped
0
20
40
60
80
100
0.005
0.01
0.015
0.02
0.025
0.03VGS/V =
ID/A
3
3.5
4
4.5
5
6
February 1998
4
Rev 1.100
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