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參數(shù)資料
| 型號(hào)： | BUK9006-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel Enhancement mode field-effect power Transistor |
| 中文描述： | 125 A, 55 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 226K |
| 代理商： | BUK9006-55A |
Philips Semiconductors
BUK9006-55A
TrenchMOS logic level FET
Preliminary data
Rev. 01 — 1 August 2003
4 of 10
9397 750 11571
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Remark:
Figures 1, 2, and 3 measured on die assembled in SOT78 with
3 x 350
μ
m source bond wires.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 1.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 2.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 3.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 4.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nn87
0
100
200
300
400
0
2
4
6
8
10
VDS (V)
ID
(A)
5
10
8
6
Label is VGS (V)
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
03nn86
5
6
7
8
9
0
5
10
15
VGS (V)
RDSon
(m
)
03nn88
5
10
15
20
0
100
200
300
400
ID (A)
RDSon
(m
)
4
5
10
Label is VGS (V)
3
3.2
3.4
3.6
3.8
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
°
)
----------------------------
=
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