參數(shù)資料
型號： BUK9006-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel Enhancement mode field-effect power Transistor
中文描述： 125 A, 55 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DIE-2
文件頁數(shù)： 3/10頁
文件大?。?/td> 226K
代理商： BUK9006-55A
Philips Semiconductors
BUK9006-55A
TrenchMOS logic level FET
Preliminary data
Rev. 01 — 1 August 2003
3 of 10
9397 750 11571
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Characteristics
Table 3:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 5
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 4
T
j
= 25
°
C
T
j
= 175
°
C
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon(die)
gate-source leakage current
die drain-source on-state
resistance
-
-
5
-
6
12
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward)
voltage
t
rr
reverse recovery time
Q
r
recovered charge
V
GS
= 5 V; V
DS
= 44 V;
I
D
= 25 A;
Figure 10
-
-
-
-
-
-
-
-
-
-
92
11
43
4550
760
500
40
175
280
167
-
-
-
6020
900
690
-
-
-
-
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 8
V
DS
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 10
I
S
= 25 A; V
GS
= 0 V;
Figure 11
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
-
0.85
1.2
V
-
-
70
160
-
-
ns
nC
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