參數(shù)資料
型號(hào)： BUK7775-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS standard level FET
中文描述： 11 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 130K
代理商： BUK7775-55A
Philips Semiconductors
BUK7775-55A
N-channel TrenchMOS standard level FET
Product data
Rev. 02 — 7 June 2004
2 of 12
9397 750 13325
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
I
DM
is limited by chip, not package.
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
Max
55
11
18
150
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 10 A
T
j
= 25
°
C
T
j
= 150
°
C
63
-
75
138
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
Max
55
55
±
20
11
Unit
V
V
V
A
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
-
8
A
I
DM
peak drain current
[1]
-
46
A
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
peak reverse drain current
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
total power dissipation
storage temperature
operating junction temperature
-
55
55
18
+150
+150
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
11
46
A
A
unclamped inductive load; I
D
= 11 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
j
= 25
°
C
-
50
mJ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK78150-55 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK78150-55A 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 5.5A SOT223 制造商:NXP Semiconductors 功能描述:MOSFET, N CH 55V 5.5A SOT223
BUK78150-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK78150-55A T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK78150-55A,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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