參數(shù)資料
型號： BUK664R6-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 80 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 356K
代理商： BUK664R6-40C
BUK664R6-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 November 2010
7 of 14
NXP Semiconductors
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.85
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
42
65
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6.
Forward transconductance as a function of
drain current; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae319
0
20
40
60
80
100
0
2
4
6
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae320
0
20
40
60
80
100
g
fs
(S)
0
20
40
60
80
I
D
(A)
003aae323
0
5
10
15
20
0
5
10
15
20
V
GS
(V)
R
DSon
(m
Ω
)
003aae318
0
25
50
75
100
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
V
GS
(V) = 4
3.4
3.6
3.8
10.0
4.5
5.0
3.2
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相關代理商/技術參數(shù)
參數(shù)描述
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R8-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404
BUK664R8-75C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6C2R1-55C 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 228A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:228A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V ;RoHS Compliant: Yes
BUK6C2R1-55C,118 功能描述:MOSFET N-chan TrenchMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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