參數(shù)資料
型號： BUK664R6-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 80 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 2/14頁
文件大?。?/td> 356K
代理商： BUK664R6-40C
BUK664R6-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 November 2010
2 of 14
NXP Semiconductors
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
40 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
179
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
25.9
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
Drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT404 (D2PAK)
mb
1
3
2
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
Version
SOT404
BUK664R6-40C
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相關代理商/技術參數(shù)
參數(shù)描述
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R8-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404
BUK664R8-75C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6C2R1-55C 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 228A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:228A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V ;RoHS Compliant: Yes
BUK6C2R1-55C,118 功能描述:MOSFET N-chan TrenchMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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