參數(shù)資料
型號: BUK654R6-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 4/14頁
文件大?。?/td> 187K
代理商: BUK654R6-55C
BUK654R6-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
4 of 14
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
V
GS
10 V
(1) capped at 100 A due to package
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
T
mb
= 25 °C; I
DM
is a single pulse
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 3.
003aae706
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
I
D
(A)
(1)
T
mb
(
°
C)
0
200
150
50
100
03aa16
40
80
120
P
der
(%)
0
003aae707
10
-1
1
10
10
2
10
3
10
4
I
D
(A)
10
-1
1
10
10
2
V
DS
(V)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
100 ms
t
p
= 10
μ
s
1 ms
相關(guān)PDF資料
PDF描述
BUK654R8-40C N-channel TrenchMOS intermediate level FET
BUK655R0-75C N-channel TrenchMOS FET
BUK6607-55C N-channel TrenchMOS logic and standard level FET
BUK6607-75C N-channel TrenchMOS FET
BUK6610-75C N-channel TrenchMOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK654R6-55C,127 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK654R8-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V88ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.84mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK654R8-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK655-450B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK655-500A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET