參數(shù)資料
型號(hào): BUK654R6-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 5/14頁(yè)
文件大?。?/td> 187K
代理商: BUK654R6-55C
BUK654R6-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
5 of 14
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
5.
Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see
Figure 4
-
-
0.74
K/W
R
th(j-a)
thermal resistance from junction to
ambient
vertical in free air
-
60
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
single shot
0.2
0.1
0.05
0.02
10
3
10
2
10
1
1
10
5
10
4
10
3
10
2
10
1
1
tp (s)
Z
th(j-mb)
(K/W)
δ
= 0.5
003aae531
t
p
t
p
T
T
P
t
δ
=
10
6
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