參數(shù)資料
型號： BUK654R6-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 7/14頁
文件大?。?/td> 187K
代理商： BUK654R6-55C
BUK654R6-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
7 of 14
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
-
0.83
1.2
V
t
rr
Q
r
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
55
-
ns
recovered charge
-
112
-
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
T
j
= 25°C; V
DS
= 25 V
Forward transconductance as a function of
drain current; typical values
T
j
= 25°C; t
p
= 300
μ
s
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 5.
Fig 6.
V
DS
= 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
= 25°C; I
D
25 A
Fig 7.
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae708
0
40
80
120
160
0
20
40
60
80
I
D
(A)
g
fs
(S)
003aae709
0
40
80
120
160
200
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
3.4
3.6
3.8
4
4.5
V
GS
(V) = 10 6
5
003aae710
0
40
80
120
160
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae711
0
4
8
12
16
20
0
2
4
6
8
10
V
GS
(V)
R
DSon
(m
Ω
)
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參數(shù)描述
BUK654R6-55C,127 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK654R8-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V88ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,88A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.84mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK654R8-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK655-450B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK655-500A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
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