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參數(shù)資料
| 型號： | BUK654R6-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 187K |
| 代理商： | BUK654R6-55C |
BUK654R6-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
3 of 14
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16 V accumulated duration not to exceed 168 hrs.
[2]
Accumulated pulse duration not to exceed 5 mins.
[3]
Continuous current is limited by package.
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
Parameter
Conditions
Min
Max
Unit
V
DS
V
GS
drain-source voltage
T
j
≥
25 °C; T
j
≤
175 °C
DC
-
55
V
gate-source voltage
[1]
-16
16
V
pulsed
[2]
-20
20
V
I
D
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 μs; pulsed;
see
Figure 3
[3]
-
100
A
-
92.6
A
I
DM
peak drain current
-
524
A
P
tot
T
stg
T
j
Source-drain diode
total power dissipation
T
mb
= 25 °C; see
Figure 2
-
204
W
storage temperature
-55
175
°C
junction temperature
-55
175
°C
I
S
I
SM
Avalanche ruggedness
source current
T
mb
= 25 °C
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
[3]
-
100
A
peak source current
-
524
A
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C
-
263
mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
[4][5][6]
-
-
J
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