參數(shù)資料
型號(hào): BUJ302AD
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: NPN power transistor
中文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 532K
代理商: BUJ302AD
BUJ302AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 28 March 2011
2 of 14
NXP Semiconductors
BUJ302AD
NPN power transistor
2.
Pinning information
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
B
base
C
collector
[1]
E
emitter
C
mounting base; connected to
collector
Simplified outline
Graphic symbol
SOT428 (DPAK)
3
2
mb
1
sym123
C
E
B
Table 3.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUJ302AD
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
V
EBO
Parameter
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
emitter-base voltage
Conditions
V
BE
= 0 V
I
B
= 0 A
see
Figure 1
; see
Figure 2
; see
Figure 4
Min
-
-
-
-
-
-
-
-65
-
-
Max
1050
400
4
8
2
4
80
150
150
24
Unit
V
V
A
A
A
A
W
°C
°C
V
T
mb
25 °C; see
Figure 3
I
C
= 0 A; I
E
= 2 A; t
p
< 10 ms
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BUJ302AD,118 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
BUJ302AX,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ303A 功能描述:兩極晶體管 - BJT RAIL BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ303A,127 功能描述:兩極晶體管 - BJT RAIL BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2