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參數(shù)資料
| 型號： | BUJ105AD |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 封裝： | BUJ105AD<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 127K |
| 代理商： | BUJ105AD |
BUJ105AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
4 of 13
NXP Semiconductors
BUJ105AD
Silicon diffused power transistor
[1]
Measured with half sine-wave voltage (curve tracer).
Dynamic characteristics
Switching times (resistive load); see
Figure 5
and
6
t
on
turn-on time
t
stg
storage time
t
f
fall time
Switching times (inductive load); see
Figure 7
and
8
t
stg
storage time
t
f
fall time
Switching times (inductive load); see
Figure 7
and
8
t
stg
storage time
t
f
fall time
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A; R
L
= 75
-
-
-
0.65
1.8
0.3
1
2.5
0.5
s
s
s
I
Con
= 5 A; I
Bon
= 1 A; L
B
= 1
H;
V
BB
=
5 V
-
-
1.2
20
1.7
50
s
ns
I
Con
= 5 A; I
Bon
= 1 A; L
B
= 1
H;
V
BB
=
5 V; T
j
= 100
C
-
-
1.4
25
1.9
100
s
ns
Table 5.
T
mb
= 25
C; unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
Fig 3.
Test circuit for collector-emitter sustaining
voltage
Fig 4.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
001aab987
horizontal
1
Ω
300
Ω
6 V
vertical
oscilloscope
50 V
100
Ω
to 200
Ω
30 Hz to 60 Hz
001aab988
V
CE
(V)
min
V
CEOsus
I
C
(mA)
10
100
250
0
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| BUJ105AD,118 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ106A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ106A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 10A 3Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ106AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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