參數(shù)資料
型號(hào)： BUJ103A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Silicon diffused power transistor
封裝： BUJ103A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù)： 4/13頁(yè)
文件大?。?/td> 146K
代理商： BUJ103A
BUJ103A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 8 November 2011
4 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6. Characteristics
[1]
Measured with half sine-wave voltage (curve tracer).
Table 5.
T
mb
= 25
C; unless otherwise specified.
Symbol
Parameter
Static characteristics
I
CES
collector-emitter cut-off
current
Characteristics
Conditions
Min
Typ
Max
Unit
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
; T
j
= 125
C
V
BE
= 0 V; V
CE
= V
CESMmax
V
CEO
= V
CEOMmax
= 400 V
[1]
-
-
-
-
-
1
2
1
0.1
mA
mA
mA
mA
[1]
-
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off
current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation
voltage
DC current gain
[1]
-
[1]
-
I
EBO
V
CEOsus
V
EB
= 7 V; I
C
= 0 A
I
B
= 0 A; I
C
= 10 mA; L = 25 mH;
see
Figure 3
and
4
I
C
= 3.0 A; I
B
= 0.6 A; see
Figure 10
-
400
-
-
0.1
-
mA
V
V
CEsat
-
0.25
1
V
V
BEsat
I
C
= 3.0 A; I
B
= 0.6 A; see
Figure 11
-
0.97
1.5
V
h
FE
I
C
= 1 mA; V
CE
= 5 V; see
Figure 9
I
C
= 500 mA; V
CE
= 5 V
I
C
= 2.0 A; V
CE
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
10
13
11
-
17
22
16
12.5
32
32
22
-
h
FEsat
DC saturation current gain
Dynamic characteristics
Switching times (resistive load); see
Figure 5
and
6
t
on
turn-on time
t
stg
storage time
t
f
fall time
Switching times (inductive load); see
Figure 7
and
8
t
stg
storage time
t
f
fall time
Switching times (inductive load); see
Figure 7
and
8
t
stg
storage time
t
f
fall time
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 0.5 A;
R
L
= 75
-
-
-
0.52
2.7
0.3
0.6
3.3
0.35
s
s
s
I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1
H;
V
BB
=
5 V
-
-
1.2
30
1.4
60
s
ns
I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1
H;
V
BB
=
5 V; T
j
= 100
C
-
-
-
-
1.8
120
s
ns
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