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參數(shù)資料
| 型號(hào)： | BU2722DX |
| 英文描述： | TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399 |
| 中文描述： | 晶體管|晶體管|叩| 825V五（巴西）總裁| 10A條一（c）|的SOT - 399 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BU2722DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
V
= 7.5 V
I
C
= 4.5 A; I
B
= 1.0 A
I
C
= 4.5 A; I
B
= 1.0 A
I
F
= 4.5 A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
B
VEBO
R
EB
V
CEsat
V
BEsat
V
F
h
FE
h
FE
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
85
7.5
-
150
-
mA
V
V
V
V
13.5
65
-
0.87
1.6
19
7
-
1.0
0.96
0.79
14
4.5
26
10
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 4.5 A; L
C
= 260
μ
H;
C
fb
= 4.8 nF; V
CC
= 160 V;
I
B(end)
= 0.7 A; L
B
= 0.6
μ
H; -V
BB
= 2 V;
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
1.9
0.4
2.25
0.48
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
January 1997
2
Rev 1.000
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