參數(shù)資料
型號(hào): BU2725DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 1/7頁
文件大小: 64K
代理商: BU2725DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V
CES
pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
7.0
1.5
MAX.
1700
12
30
45
1.0
-
2
UNIT
V
A
A
W
V
A
μ
s
T
hs
25 C
I
= 7.0 A; I
B
= 1.75 A
f = 16 kHz
I
Csat
= 7.0 A; f = 16 kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
12
30
12
20
200
9
45
150
150
UNIT
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
25 C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
1.5 k
)
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.100
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