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參數(shù)資料
| 型號： | BRY39 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | Programmable unijunction transistor/ Silicon controlled switch |
| 中文描述： | PROGRAMMABLE UJT, TO-72 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | BRY39 |
1997 Jul 24
5
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
BRY39
SWITCHING TIMES
t
on
turn-on time
V
KG-K
=
0.5 to 4.5 V; R
KG-K
= 1 k
;
see Figs 15 and 16
V
KG-K
=
0.5 to 0.5 V; R
KG-K
= 10 k
R
KG-K
= 10 k
; see Figs 17 and 18
0.25
μ
s
1.5
15
μ
s
μ
s
t
off
turn-off time
Programmable unijunction transistor
I
p
peak point current
V
S
= 10 V; R
G
= 10 k
;
see Figs 3 and 8
V
S
= 10 V; R
G
= 100 k
;
see Figs 3 and 8
V
S
= 10 V; R
G
= 10 k
;
see Figs 3 and 8
V
S
= 10 V; R
G
= 100 k
;
see Figs 3 and 8
typical curve; I
A
= 0; for V
P
and V
S
see Fig.8
I
K
= 0; V
GA
= 70 V
V
AK
= 0; V
KG
= 70 V
I
A
= 100 mA
V
AA
= 20 V; C = 10 nF;
see Figs 9 and 11
V
AA
= 20 V; C = 10 nF; see Fig.11
0.2
μ
A
0.06
μ
A
I
v
valley point current
2
μ
A
1
μ
A
V
offset
offset voltage
V
I
GAO
I
GKS
V
AK
V
OM
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
6
10
100
1.4
nA
nA
V
V
t
r
rise time
80
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Explanation of symbols
For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To
simplify the symbols, the term gate instead of anode gate
will be used (see Fig.2).
Fig.2
Programmable unijunction transistor
explanation of symbols.
handbook, halfpage
MBB700
g
gate
k
cathode
anode
a
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