參數(shù)資料
型號: BRY39
廠商: NXP SEMICONDUCTORS
元件分類: 單結(jié)晶體管
英文描述: Programmable unijunction transistor/ Silicon controlled switch
中文描述: PROGRAMMABLE UJT, TO-72
文件頁數(shù): 3/16頁
文件大?。?/td> 102K
代理商: BRY39
1997 Jul 24
3
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
BRY39
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
T
stg
T
j
T
amb
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°
C
65
65
275
+200
150
+150
mW
°
C
°
C
°
C
Silicon controlled switch
V
CBO
collector-base voltage
PNP
NPN
collector-emitter voltage
PNP
NPN
collector-emitter voltage
PNP
NPN
emitter-base voltage
PNP
NPN
collector current (DC)
PNP
NPN
peak collector current
PNP
NPN
emitter current (DC)
PNP
NPN
repetitive peak emitter current
PNP
NPN
open emitter
70
70
V
V
V
CER
R
BE
= 10 k
70
V
V
V
CEO
open base
70
V
V
V
EBO
open collector
70
5
V
V
I
C
note 1
175
mA
I
CM
note 2
175
mA
I
E
175
175
mA
mA
I
ERM
t
p
= 10
μ
s;
δ
= 0.01
2.5
2.5
A
A
Programmable unijunction transistor
V
GA
I
A
gate-anode voltage
anode current (AV)
70
175
V
mA
T
amb
25
°
C
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