參數(shù)資料
型號: BRY39
廠商: NXP SEMICONDUCTORS
元件分類: 單結(jié)晶體管
英文描述: Programmable unijunction transistor/ Silicon controlled switch
中文描述: PROGRAMMABLE UJT, TO-72
文件頁數(shù): 10/16頁
文件大?。?/td> 102K
代理商: BRY39
1997 Jul 24
10
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
BRY39
Fig.19 Silicon controlled switch normalized
DC current gain as a function of
anode gate current.
handbook, halfpage
0
100
0
0.4
0.8
MBB584
50
hFE
X
IAG (mA)
VAG-K = 5 V
2 V
X = value of h
FE
at I
C
= 10 mA; V
AG-K
= 2 V; T
amb
= 25
°
C.
Fig.20 Silicon controlled switch normalized
DC current gain as a function of
ambient temperature.
handbook, halfpage
0
1.4
1.0
0.6
50
150
MBB583
100
Tamb
o
hFE
X
X = value of h
FE
at I
AG
= 10 mA; V
AG-K
= 2 V; T
amb
= 25
°
C.
Fig.21 Silicon controlled switch normalized
anode-cathode voltage as a function of
ambient temperature.
handbook, halfpage
50
0
50
150
0.6
0.8
1
MBB581
100
Tamb
o
VAK
X
X = value of V
AK
at I
A
= 1 mA; I
AG
= 10 mA; V
BB
=
2 V;
R
KG-K
= 10 k
; T
amb
= 25
°
C.
Fig.22 Silicon controlled switch normalized
holding current as a function of
ambient temperature.
handbook, halfpage
IH
X
50
0
50
150
1.1
0.9
0.8
1
MBB587
100
Tamb (
o
C)
X = value of I
H
at I
AG
= 10 mA; V
BB
=
2 V; R
KG-K
= 10 k
;
T
amb
= 25
°
C.
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