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參數(shù)資料
| 型號： | BRY39 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | Programmable unijunction transistor/ Silicon controlled switch |
| 中文描述： | PROGRAMMABLE UJT, TO-72 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | BRY39 |
1997 Jul 24
2
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
BRY39
FEATURES
Silicon controlled switch
Programmable unijunction
transistor.
APPLICATIONS
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
DESCRIPTION
Silicon planar PNPN switch or trigger
device in a TO-72 metal package.
It is an integrated PNP/NPN transistor
pair with all electrodes accessible.
PINNING
PIN
DESCRIPTION
1
2
3
4
cathode
cathode gate
anode gate (connected to case)
anode
handbook, halfpage
MGL168
k
a
kg
ag
Fig.1 Simplified outline (TO-72) and symbol.
book, halfpage
12
3
4
MSB028
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Silicon controlled switch
PNP TRANSISTOR
V
EBO
emitter-base voltage
open collector
70
V
NPN TRANSISTOR
V
CBO
I
ERM
P
tot
T
j
V
AK
I
H
t
on
t
off
collector-base voltage
repetitive peak emitter current
total power dissipation
junction temperature
forward on-state voltage
holding current
turn-on time
turn-off time
open emitter
70
2.5
275
150
1.4
1
0.25
15
V
A
mW
°
C
V
mA
μ
s
μ
s
T
amb
≤
25
°
C
I
A
= 50 mA; I
AG
= 0; R
KG-K
= 10 k
I
AG
= 10 mA; V
BB
=
2 V; R
KG-K
= 10 k
Programmable unijunction transistor
V
GA
I
A
T
j
I
p
gate-anode voltage
anode current (DC)
junction temperature
peak point current
70
175
150
0.2
V
mA
°
C
μ
A
T
amb
≤
25
°
C
V
S
= 10 V; R
G
= 10 k
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