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參數(shù)資料
| 型號(hào)： | BRY39 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | Programmable unijunction transistor/ Silicon controlled switch |
| 中文描述： | PROGRAMMABLE UJT, TO-72 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | BRY39 |
1997 Jul 24
4
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
BRY39
Notes
1.
2.
Provided the I
E
rating is not exceeded.
During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 k
.
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
I
ARM
I
ASM
dI
A
/dt
repetitive peak anode current
non-repetitive peak anode current
rate of rise of anode current
t
p
= 10
μ
s;
δ
= 0.01
t
p
= 10
μ
s; T
j
= 150
°
C
I
A
≤
2.5 A
2.5
3
20
A
A
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
450
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
I
CEO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
B
= 0; V
CE
=
70 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
70 V; T
j
= 150
°
C
I
E
= 1 mA; V
CE
=
5 V
3
10
10
15
μ
A
μ
A
INDIVIDUAL NPN TRANSISTOR
I
CER
collector cut-off current
V
CE
= 70 V; R
BE
= 10 k
V
CE
= 70 V; R
BE
= 10 k
; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V; T
j
= 150
°
C
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; V
CE
= 2 V
I
E
= i
e
= 0; V
CB
= 20 V
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz
100
10
10
0.5
0.9
5
25
nA
μ
A
μ
A
V
V
I
EBO
V
CEsat
V
BEsat
h
FE
C
c
C
e
f
T
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
collector capacitance
emitter capacitance
transition frequency
50
100
pF
pF
MHz
COMBINED DEVICE
V
AK
forward on-state voltage
R
KG-K
= 10 k
I
A
= 50 mA; I
AG
= 0
I
A
= 50 mA; I
AG
= 0; T
j
=
55
°
C
I
A
= 1 mA; I
AG
= 10 mA
V
BB
=
2 V; I
AG
= 10 mA;
R
KG-K
= 10 k
; see Fig.14
1.4
1.9
1.2
1
V
V
V
mA
I
H
holding current
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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