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參數(shù)資料
| 型號： | BR24L01AFJ-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 128】8 bit electrically erasable PROM |
| 中文描述： | 128】8位電可擦除可編程ROM |
| 文件頁數(shù)： | 21/26頁 |
| 文件大小： | 391K |
| 代理商： | BR24L01AFJ-W |
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /
Memory ICs
BR24L01AFV-W / BR24L01AFVM-W
21/25
The maximum value of R
S
The maximum value of R
S
is determined by following factors.
x
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS ) of SDA must be less than t
R
.
And the other timing must also keep the conditions of the AC timing.
y
When the device outputs LOW on SDA line, the voltage of the bus A determined by R
PU
and R
S
must be
lower than the inputs LOW level of the controller, including recommended noise margin (0.1V
CC
).
V
OL
V
IL
R
PU
V
CC
R
S
I
OL
CONTROLLER
EEPROM
A
CAPACITANCE OF
BUS LINE (CBUS)
R
S
≤
×
R
PU
1.1V
CC
V
IL
V
IL
V
OL
0.1V
CC
R
S
≤
×
20
×
10
3
1.1
×
3
0.3
×
3
0.3
×
3
0.4
0.1
×
3
+
V
OL
+
0.1V
CC
≤
V
IL
(V
CC
V
OL
)
×
R
S
R
PU
+
R
S
≤
1.67 [k
]
Examples : when V
CC
=
3V, V
IL
=
0.3V
CC
, V
OL
=
0.4V, R
PU
=
20k
According to 2
The minimum value of R
S
The minimum value of R
S
is determined by the current overload due to the conflict on the bus.
The current overload may cause noise on the power line and instantaneous power down.
The following conditions must be met, where
Ι
is the maximum permissible current.
The maximum permissible current depends on V
CC
line impedance and so on. It need to be less than 10mA for
EEPROM.
R
S
≥
V
CC
Ι
R
S
≥
3
10
×
10
3
≤
Ι
V
CC
R
S
≥
300 [
]
Examples : When V
CC
=
3V,
Ι=
10mA
R
PU
R
S
CONTROLLER
EEPROM
"L" OUTPUT
"H" OUTPUT
MAXIMUM
CURRENT
Ι
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR24L01 | 128】8 bit electrically erasable PROM |
| BR24L04F-W | 512】8 bit electrically erasable PROM |
| BR24L04FJ-W | 512】8 bit electrically erasable PROM |
| BR24L04FV-W | 512】8 bit electrically erasable PROM |
| BR24L04FVM-W | 512】8 bit electrically erasable PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR24L01AFJ-WE2 | 功能描述:電可擦除可編程只讀存儲器 SRL 128X8 BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24L01AFVJ-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:I2C BUS 1Kbit (128 x 8bit) EEPROM |
| BR24L01AFVJ-WE2 | 功能描述:IC EEPROM SER 1KBIT I2C 8TSSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| BR24L01AFVM-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:128】8 bit electrically erasable PROM |
| BR24L01AFVM-WTR | 功能描述:電可擦除可編程只讀存儲器 IC 電可擦除可編程只讀存儲器 SRL 128X8BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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