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參數(shù)資料
| 型號： | BR24L01AFJ-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 128】8 bit electrically erasable PROM |
| 中文描述： | 128】8位電可擦除可編程ROM |
| 文件頁數(shù)： | 17/26頁 |
| 文件大?。?/td> | 391K |
| 代理商： | BR24L01AFJ-W |
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /
Memory ICs
BR24L01AFV-W / BR24L01AFVM-W
17/25
5) Notes for power supply
V
CC
rises through the low voltage region in which internal circuit of IC and the controller are unstable, so that device
may not work properly due to an incomplete reset of internal circuit.
To prevent this, the device has the feature of P.O.R. and LV
CC
.
In the case of power up, keep the following conditions to ensure functions of P.O.R and LV
CC
.
(1) It is necessary to be “SDA=H” and “SCL=’L’ or ‘H’ ”.
(2) Follow the recommended conditions of t
R
, t
OFF
, Vbot for the function of P.O.R. durning power up.
t
R
t
OFF
Vbot
V
CC
rising wave from
V
CC
0
Recommended conditions of t
R
, t
OFF
, Vbot
Below 10ms
Below 100ms
t
R
t
OFF
Vbot
Below 0.3V
Below 0.2V
Above 10ms
Above 10ms
(3) Prevent SDA and SCL from being “Hi-Z”.
In case that condition 1. and / or 2. cannot be met, take following actions.
A) Unable to keep condition 1. (SDA is “LOW” during power up.)
→
Control SDA, SCL to be “HIGH” as figure below.
t
LOW
t
DH
t
SU:DAT
After V
CC
becomes stable
SDA
SCL
V
CC
a) SCL
=
"H" and SDA
=
"L"
t
SU:DAT
After V
CC
becomes stable
b) SCL
=
"L" and SDA
=
"L"
B) Unable to keep condition 2.
→
After power becomes stable, execute software reset. (See page14 )
C) Unable to keep condition 1 and 2.
→
Follow the instruction A first, then the instruction B.
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| BR24L04F-W | 512】8 bit electrically erasable PROM |
| BR24L04FJ-W | 512】8 bit electrically erasable PROM |
| BR24L04FV-W | 512】8 bit electrically erasable PROM |
| BR24L04FVM-W | 512】8 bit electrically erasable PROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BR24L01AFJ-WE2 | 功能描述:電可擦除可編程只讀存儲器 SRL 128X8 BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24L01AFVJ-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:I2C BUS 1Kbit (128 x 8bit) EEPROM |
| BR24L01AFVJ-WE2 | 功能描述:IC EEPROM SER 1KBIT I2C 8TSSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| BR24L01AFVM-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:128】8 bit electrically erasable PROM |
| BR24L01AFVM-WTR | 功能描述:電可擦除可編程只讀存儲器 IC 電可擦除可編程只讀存儲器 SRL 128X8BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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