參數(shù)資料
型號(hào)： BR24L01AFJ-W
廠商： Rohm CO.,LTD.
英文描述： 128】8 bit electrically erasable PROM
中文描述： 128】8位電可擦除可編程ROM
文件頁(yè)數(shù)： 19/26頁(yè)
文件大?。?/td> 391K
代理商： BR24L01AFJ-W
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /
Memory ICs
BR24L01AFV-W / BR24L01AFVM-W
19/25
The minimum value R
PU
The minimum value of R
PU
is determined by following factors.
x
Meet the condition that V
OLMAX
=0.4V, I
OLMAX
=3mA when the device output low on SDA line.
R
PU
≥
V
CC
V
OL
I
OL
≤
I
OL
V
CC
V
OL
R
PU
y
V
OLMAX
(=0.4V) must be lower than the input LOW level of the controller and the EEPROM including
recommended noise margin (0.1 V
CC
).
V
OLMAX
≤
V
IL
0.1V
CC
R
PU
≥
3
0.4
3
×
10
3
≥
867 [
]
Examples : V
CC
=
3V, V
OL
=
0.4V, I
OL
=
3mA, the V
IL
of the controller and the EEPROM is V
IL
=
0.3V
CC
According to
and
so that condition is met
1
2
V
OL
V
IL
=
0.4[V]
=
0.3
×
3
=
0.9[V]
Pull up resister of SCL pin
In the case that SCL is controlled by CMOS output, the pull up resister of SCL is not needed.
But in the case that there is a timing at which SCL is Hi-Z, connect SCL to V
CC
with pull up resister.
Several
～
several dozen k
is recommended as a pull up resister, which is considered with the driving ability of the
output port of the controller.
7) Connections of A0, A1, A2, WP pin
Connections of device address pin (A0, A1, A2)
The state of device address PIN are compared with the device address send by the master, then one of the devices
which are connected to the identical bus is selected. Pull up or down these pins, or connect them to V
CC
or GND.
Pins which is not used as device address (N.C. PIN) may be either HIGH, LOW, and Hi-Z.
The type of the device which have N.C. PIN BR24L16 / F / FJ / FV / FVM-W A0, A1, A2
BR24L08 / F / FJ / FV / FVM-W A0, A1
BR24L04 / F / FJ / FV / FVM-W A0
Connections of WP pin
The WP input allows or inhibits write operations. When WP is HIGH, only READ is available and WRITE to any
address is inhibited. Both Read and Write are available when WP is LOW.
In the case that the device is used as a ROM, it is recommended that WP is pulled up or connected to V
CC
.
In the case that both READ and WRITE are operated, WP pin must be pulled down or connected to GND or
controlled.
相關(guān)PDF資料
PDF描述
BR24L01 128】8 bit electrically erasable PROM
BR24L04F-W 512】8 bit electrically erasable PROM
BR24L04FJ-W 512】8 bit electrically erasable PROM
BR24L04FV-W 512】8 bit electrically erasable PROM
BR24L04FVM-W 512】8 bit electrically erasable PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BR24L01AFJ-WE2 功能描述:電可擦除可編程只讀存儲(chǔ)器 SRL 128X8 BIT RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
BR24L01AFVJ-W 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:I2C BUS 1Kbit (128 x 8bit) EEPROM
BR24L01AFVJ-WE2 功能描述:IC EEPROM SER 1KBIT I2C 8TSSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱(chēng):71V256SA15PZGI8
BR24L01AFVM-W 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:128】8 bit electrically erasable PROM
BR24L01AFVM-WTR 功能描述:電可擦除可編程只讀存儲(chǔ)器 IC 電可擦除可編程只讀存儲(chǔ)器 SRL 128X8BIT RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
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