- 您現(xiàn)在的位置：買賣IC網 > PDF目錄385187 > BR24L01AFJ-W (Rohm CO.,LTD.) 128】8 bit electrically erasable PROM PDF資料下載
參數(shù)資料
| 型號： | BR24L01AFJ-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 128】8 bit electrically erasable PROM |
| 中文描述： | 128】8位電可擦除可編程ROM |
| 文件頁數(shù)： | 18/26頁 |
| 文件大?。?/td> | 391K |
| 代理商： | BR24L01AFJ-W |
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /
Memory ICs
BR24L01AFV-W / BR24L01AFVM-W
18/25
LV
CC
circuit
LV
CC
circuit inhibit write operation at low voltage, and prevent an inadvertent write. Below the LV
CC
voltage
(Typ.=1.2V), write operation is inhibited.
6) I / O circuit
Pull up resister of SDA pin
The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R
PU
) properly,
by considering V
IL
, I
L
characteristics of a controller which control the device and V
OH
, I
OL
characteristics of the device.
If large R
PU
is chosen, clock frequency need to be slow. In case of small R
PU
, the operating current increases.
Maximum of R
PU
Maximum of R
PU
is determined by following factor.
x
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS) must be less than T
R
.
And the other timing must keep the conditions of AC spec.
y
When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I
L
) of the all devices
connected
to the bus and R
PU
must be enough higher than input HIGH level of a controller and the device,
including noise margin 0.2 V
CC
.
A
IL
IL
MICRO
COMPUTER
BR24LXX
SDA PIN
R
PU
THE CAPACITANCE OF
BUS LINE (CBUS)
V
CC
I
L
R
PU
0.2V
CC
≥
V
IH
R
PU
≤
0.8V
CC
V
IH
IL
R
PU
≤
0.8
×
3
0.7
×
3
10
×
10
6
≤
300 [k
]
Examples : When V
CC
=
3V I
L
=
10
μ
A V
IH
=
0.7V
CC
According to 2
相關PDF資料 |
PDF描述 |
|---|---|
| BR24L01 | 128】8 bit electrically erasable PROM |
| BR24L04F-W | 512】8 bit electrically erasable PROM |
| BR24L04FJ-W | 512】8 bit electrically erasable PROM |
| BR24L04FV-W | 512】8 bit electrically erasable PROM |
| BR24L04FVM-W | 512】8 bit electrically erasable PROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BR24L01AFJ-WE2 | 功能描述:電可擦除可編程只讀存儲器 SRL 128X8 BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24L01AFVJ-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:I2C BUS 1Kbit (128 x 8bit) EEPROM |
| BR24L01AFVJ-WE2 | 功能描述:IC EEPROM SER 1KBIT I2C 8TSSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| BR24L01AFVM-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:128】8 bit electrically erasable PROM |
| BR24L01AFVM-WTR | 功能描述:電可擦除可編程只讀存儲器 IC 電可擦除可編程只讀存儲器 SRL 128X8BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復。