- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385185 > bq2011 (Benchmark Technology Group) Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片) PDF資料下載
參數(shù)資料
| 型號： | bq2011 |
| 廠商： | Benchmark Technology Group |
| 英文描述： | Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片) |
| 中文描述： | 氣體計IC，高放電率（用于高放電率的氣體計芯片） |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 181K |
| 代理商： | BQ2011 |
Register Backup
The bq2011 RBI input pin is intended to be used with a
storage capacitor to provide backup potential to the inter-
nal bq2011 registers when V
CC
momentarily drops below
3.0V. V
CC
is output on RBI when V
CC
is above 3.0V.
After V
CC
rises above 3.0V, the bq2011 checks the inter-
nal registers for data loss or corruption.
changed, then the NAC and FULCNT registers are
cleared, and the LMD register is loaded with the initial
PFC.
If data has
Voltage Thresholds
In conjunction with monitoring V
SR
for charge/discharge
currents, the bq2011 monitors the single-cell battery po-
tential through the SB pin. The single-cell voltage po-
tential is determined through a resistor-divider network
per the following equation:
RB
RB
2
N
1
1
=
where N is the number of cells, RB
1
is connected to the
positive battery terminal, and RB
2
is connected to the
negative battery terminal. The single-cell battery volt-
age is monitored for the end-of-discharge voltage (EDV)
and for maximum cell voltage (MCV). The EDV thresh-
old level is used to determine when the battery has
reached an “empty” state, and the MCV threshold is used
for fault detection during charging. The EDV and MCV
thresholds for the bq2011 are fixed at:
V
EDV
= 0.90V
V
MCV
= 2.00V
During discharge and charge, the bq2011 monitors V
SR
for various thresholds, V
SR1
–V
SR4
. These thresholds are
used to compensate the charge and discharge rates. Ref-
er to the discharge compensation section for details.
EDV monitoring is disabled if V
SR
> V
SR1
(50mV typical)
and resumes 1 second after V
SR
drops back below V
SR1
.
Reset
The bq2011 recognizes a valid battery whenever V
SB
is
greater than 0.1V typical. V
SB
rising from below 0.25V
resets the device. Reset can also be accomplished with a
command over the serial port as described in the Reset
Register section.
Temperature
The bq2011 internally determines the temperature in
10°C steps centered from -35°C to +85°C. The tempera-
ture steps are used to adapt charge and discharge rate
compensations, self-discharge counting, and available
charge display translation.
available over the serial port in 10°C increments as
shown below:
The temperature range is
Layout Considerations
The bq2011 measures the voltage differential between
the SR and V
SS
pins. V
OS
(the offset voltage at the SR
pin) is greatly affected by PC board layout. For optimal
results, the PC board layout should follow the strict rule
of a single-point ground return. Sharing high-current
ground with small signal ground causes undesirable
noise on the small signal nodes. Additionally:
The capacitors (SB and V
CC
) should be placed as close
as possible to the SB and V
CC
pins, respectively, and
their paths to V
SS
should be as short as possible. A
high-quality ceramic capacitor of 0.1
μ
f is recommended
for V
CC
.
The sense resistor (R
S
) should be as close as possible
to the bq2011.
The R-C on the SR pin should be located as close as
possible to the SR pin. The maximum R should not
exceed 20K.
4
bq2011
TMPGG (hex)
Temperature Range
0x
< -30°C
1x
-30°C to -20°C
2x
-20°C to -10°C
3x
-10°C to 0°C
4x
0°C to 10°C
5x
10°C to 20°C
6x
20°C to 30°C
7x
30°C to 40°C
8x
40°C to 50°C
9x
50°C to 60°C
Ax
60°C to 70°C
Bx
70°C to 80°C
Cx
> 80°C
相關PDF資料 |
PDF描述 |
|---|---|
| bq2012 | Gas Gauge IC With Slow-Charge Control(Gas Gauge芯片（帶慢充電控制）) |
| bq2013H | Gas Gauge IC for Power-Assist Applications(應用于電源援助的氣體Gauge芯片) |
| bq2014H | Low-Cost NiCd/NiMH Gas Gauge IC(低價格NiCd/NiMHGas Gauge芯片) |
| bq2014 | Gas Gauge IC with External Charge Control(氣體Gauge（帶外部電荷控制）) |
| bq2040 | Gas Gauge IC With SMBus Interface(氣體Gauge芯片（帶SMBus 接口）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BQ2011_05 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
| BQ2011JPN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011JPN-N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011JSN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011K | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
發(fā)布緊急采購，3分鐘左右您將得到回復。