參數(shù)資料
型號: bq2011
廠商: Benchmark Technology Group
英文描述: Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片)
中文描述: 氣體計IC,高放電率(用于高放電率的氣體計芯片)
文件頁數(shù): 14/20頁
文件大小: 181K
代理商: BQ2011
Full Count Register (FULCNT)
The read-only FULCNT register (address=0bh) provides
the system with a diagnostic of the number of times the
battery has been fully charged (NAC = LMD).
number of full occurrences can be determined by multiply-
ing the value in the FULCNT register by 16. Any dis-
charge action other than self-discharge allows detection of
another full occurrence during the next valid charge ac-
tion.
The
Capacity Inaccurate Count Register (CPI)
The read-only CPI register (address=09h) is used to in-
dicate the number of times a battery has been charged
without an LMD update. Because the capacity of a re-
chargeable battery varies with age and operating condi-
tions, the bq2011 adapts to the changing capacity over
time.
A complete discharge from full (NAC=LMD) to
empty (EDV=1) is required to perform an LMD update
assuming there have been no intervening valid charges,
the temperature is greater than or equal to 0°C, and the
self-discharge counter is less than 4096 counts.
The CPI register is incremented every time a valid
charge is detected. The register increments to 255 with-
out rolling over.
When the contents of CPI are incre-
mented to 64, the capacity inaccurate flag, CI, is as-
serted in the FLGS1 register. CPI is reset whenever an
update of the LMD register is performed, and the CI flag
is also cleared.
Output Control Register (OCTL)
The write-only OCTL register (address=0ah) provides
the system with a means to check the display connec-
tions for the bq2011. The segment drivers may be over-
written by data from OCTL when the least-significant
bit of OCTL, OCE, is set. The data in bits OC
5–1
of the
OCTL register (see Table 4 on page 10 for details) is out-
put onto the segment pins, SEG
5–1
, respectively if
OCE=1.
Whenever OCE is written to 1, the MSB of
OCTL should be set to a 1.
The OCE register location
must be cleared to return the bq2011 to normal opera-
tion. OCE may be cleared by either writing the bit to a
logic zero via the serial port or by resetting the bq2011
as explained below.
Note:
Whenever the OCTL register is
written,the MSB of OCTL should be written to a logic one.
Reset Register (RST)
The reset register (address=39h) provides the means to
perform a software-controlled reset of the device. A full
device reset may be accomplished by first writing LMD
(address = 05h) to 00h and then writing the RST regis-
ter contents from 00h to 80h.
Setting any bit other than
the most-significant bit of the RST register is
not al-
lowed
,and results in improper operation of the bq2011.
Resetting the bq2011 sets the following:
LMD = PFC
CPI, VDQ, NAC, and OCE = 0 or
NAC = LMD when SEG5 = L
CI and BRP = 1
Display
The bq2011 can directly display capacity information
using low-power LEDs. If LEDs are used, the segment
pins should be tied to V
CC
, the battery, or the MODE pin
for programming the bq2011.
The bq2011 displays the battery charge state in either
absolute or relative mode. In relative mode, the battery
charge is represented as a percentage of the LMD. Each
LED segment represents 20% of the LMD.
In absolute mode, each segment represents a fixed
amount of charge, based on the initial PFC. In absolute
mode, each segment represents 20% of the PFC. As the
battery wears out over time, it is possible for the LMD
to be below the initial PFC. In this case, all of the LEDs
may not turn on, representing the reduction in the ac-
tual battery capacity.
The capacity display is also adjusted for the present bat-
tery temperature. The temperature adjustment reflects
the available capacity at a given temperature but does
not affect the NAC register.
ments are detailed in the TMPGG register description.
The temperature adjust-
When DISP is tied to V
CC
, the SEG
1–5
outputs are inac-
tive. When DISP is left floating, the display becomes ac-
tive during charge if the NAC registers are counting at a
rate equivalent to V
SRO
< -1mV or fast discharge if the
NAC registers are counting at a rate equivalent to V
SRO
> 2mV. When pulled low, the segment output becomes
active for 4 seconds,
±
0.5 seconds.
The segment outputs are modulated as two banks, with
segments 1, 3, and 5 alternating with segments 2 and 4.
The segment outputs are modulated at approximately
320Hz,with each bank active for 30% of the period.
SEG
1
blinks at a 4Hz rate whenever V
SB
has been de-
tected to be below V
EDV
to indicate a low-battery condi-
tion or NAC is less than 10% of the LMD or PFC, de-
pending on the display mode.
Microregulator
The bq2011 can operate directly from 4 cells. To facilitate
the power supply requirements of the bq2011, an REF out-
put is provided to regulate an external low-threshold n-
FET. A micropower source for the bq2011 can be inexpen-
sively built using the FET and an external resistor.
14
bq2011
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