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參數(shù)資料
| 型號： | bq2011 |
| 廠商： | Benchmark Technology Group |
| 英文描述： | Gas Gauge IC for High Discharge Rates(用于高放電率的氣體Gauge芯片) |
| 中文描述： | 氣體計IC，高放電率（用于高放電率的氣體計芯片） |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 181K |
| 代理商： | BQ2011 |
The gas gauge display and the gas gauge portion of the
TMPGG register are adjusted for cold temperature de-
pendencies. A piece-wise correction is performed as fol-
lows:
The adjustment between > 0°C and -20°C < T < 0°C has a
4°C hysteresis.
Nominal Available Charge Register (NAC)
The read/write NACH register (address=03h) and the
read-only NACL register (address=17h) are the main
gas gauging registers for the bq2011. The NAC registers
are incremented during charge actions and decremented
during discharge and self-discharge actions. The correc-
tion factors for charge/discharge efficiency are applied
automatically to NAC.
On reset, the NACH and NACL registers are cleared to
zero. NACL stops counting when NACH reaches zero.
When the bq2011 detects a valid charge, NACL resets to
zero;
writing to the NAC register affects the available
charge counts and, therefore, affects the bq2011 gas
gauge operation.
Battery Identification Register (BATID)
The read/write BATID register (address=04h) is avail-
able for use by the system to determine the type of bat-
tery pack. The BATID contents are retained as long as
V
CC
is greater than 2V. The contents of BATID have no
effect on the operation of the bq2011. There is no de-
fault setting for this register.
Last Measured Discharge Register (LMD)
LMD is a read/write register (address=05h) that the
bq2011 uses as a measured full reference. The bq2011
adjusts LMD based on the measured discharge capacity
of the battery from full to empty. In this way the bq2011
updates the capacity of the battery. LMD is set to PFC
during a bq2011 reset.
Secondary Status Flags Register (FLGS2)
The read-only FLGS2 register (address=06h) contains
the secondary bq2011 flags.
The
charge rate
flag (CR) is used to denote the fast
charge regime.
Fast charge is assumed whenever a
charge action is initiated. The CR flag remains asserted
if the charge rate does not fall below 2 counts/sec.
The CR values are:
Where CR is:
0
When charge rate falls below 2 counts/sec
1
When charge rate is above 2 counts/sec
The fast charge regime efficiency factors are used when
CR = 1. When CR = 0, the trickle charge efficiency fac-
tors are used. The time to change CR varies due to the
user-selectable count rates.
The
discharge rate
flags,DR2–0,are bits 6–4.
They are used to determine the present discharge re-
gime as follows:
The
overload
flag (OVLD) is asserted when a discharge
overload is detected, V
SRD
> 50mV. OVLD remains as-
serted as long as the condition persists and is cleared
when V
SRD
< 50mV.
DR2–0 and OVLD are set based on the measurement of the
voltage at the SR pin relative to V
SS
. The rate at which
this measurement is made varies with device activity.
13
bq2011
FLGS2 Bits
7
6
5
4
3
2
1
0
CR
-
-
-
-
-
-
-
FLGS2 Bits
7
6
5
4
3
2
1
0
-
DR2
DR1
DR0
-
-
-
DR2
DR1
DR0
V
SR
(V)
0
0
0
V
SR
< 50mV
0
0
1
50mV < V
SR
< 100mV
(overload, OVLD=1)
0
1
0
100mV < V
SR
< 150mV
0
1
1
150mV < V
SR
< 253mV
1
0
0
V
SRD
> 253mV
Temperature
Available Capacity Calculation
> 0°C
NAC / “Full Reference”
-20°C < T < 0°C
0.75*NAC / “Full Reference”
0.5*NAC / “Full Reference”
< -20°C
FLGS2 Bits
7
6
5
4
3
2
1
0
-
-
-
-
-
-
-
OVLD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ2011_05 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
| BQ2011JPN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011JPN-N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011JSN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery Management |
| BQ2011K | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for High Discharge Rates |
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