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參數(shù)資料
| 型號： | BPV10NF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 940nm 0.55A/W Sensitivity 2-Pin T-1 3/4 |
| 中文描述： | Photodiodes 60V 215mW 875nm |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | BPV10NF |
BPV10NF
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 22-Nov-11
2
Document Number: 81503
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0
Open circuit voltage
E
e
= 1 mW/cm
2
,
λ
= 870 nm
Short circuit current
E
e
= 1 mW/cm
2
,
λ
= 870 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 20 V, E = 0
SYMBOL
V
F
V
(BR)
I
ro
C
D
V
O
I
K
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
pF
mV
μA
60
1
5
11
450
50
Reverse light current
V
R
= 5 V
I
ra
55
μA
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
V
R
= 5 V
V
R
= 5 V,
λ
= 870 nm
I
ra
30
60
μA
Temperature coefficient of I
ra
TK
Ira
- 0.1
%/K
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
s(
λ
)
λ
p
λ
0.5
η
NEP
D*
t
r
t
f
0.55
± 20
940
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/W
ns
ns
790 to 1050
70
3 x 10
-14
3 x 10
12
2.5
2.5
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 50 V, R
L
= 50
Ω
,
λ
= 820 nm
V
R
= 50 V, R
L
= 50
Ω
,
λ
= 820 nm
20
40
60
80
1
10
100
1000
I
r
T
amb
- Ambient Temperature (°C)
100
94 8436
V
R
= 20 V
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
T
amb
- Ambient Temperature (°C)
100
94 8621
V
= 5 V
E
e
=1 mW/cm
2
λ
= 870 nm
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