參數(shù)資料
型號: BPV11F
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor
中文描述: 硅npn型光電晶體管
文件頁數(shù): 1/6頁
文件大?。?/td> 90K
代理商: BPV11F
BPV11F
Vishay Telefunken
1 (6)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81505
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T–1 plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (
p
The viewing angle of
±
15 makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
900nm).
Features
Very high radiant sensitivity
Standard T–1 ( 5 mm) package
IR filter for GaAs emitters (950 nm)
Angle of half sensitivity
=
±
15
Base terminal available
12784
Applications
Detector for industrial electronic circuitry, measurement and control
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
80
70
5
50
100
150
100
–55...+100
260
350
Unit
V
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
T
amb
10 ms
47 C
t
5 s, 2 mm from body
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