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參數(shù)資料
| 型號： | BPV10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode(反向電壓60V，寬帶檢測器應(yīng)用的PIN光二極管) |
| 中文描述： | 硅PIN光電二極管（反向電壓60V的寬帶檢測器應(yīng)用的密碼光二極管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BPV10 |
BPV10
Vishay Telefunken
1 (5)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81502
Silicon PIN Photodiode
Description
BPV10 is a very high speed and high sensitive PIN
photodiode in a standard T–1 plastic package.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation.
Features
Extra fast response times
High bandwidth B = 250 MHz at V
R
=12 V
High photo sensitivity
Radiant sensitive area A=0.78mm
2
Standard T–1 ( 5 mm) package with clear lens
Angle of half sensitivity
=
±
20
94 8390
Applications
Wide band detector for demodulation of fast signals, industrial electronics, measurement, control circuits and
fast interrupters
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
C
C
C
K/W
T
amb
25 C
t
5 s, 2 mm from body
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPV10 | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| BPV11F | Silicon NPN Phototransistor(檢測應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| BPV11F | Silicon NPN Phototransistor |
| BPV11F | Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 |
| BPV11 | Silicon NPN Phototransistor(檢測應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV10 | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
| BPV10_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode, RoHS Compliant |
| BPV10F | 功能描述:光電二極管 10V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 功能描述:光電二極管 60V 215mW 875nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV10NF | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
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