- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384152 > BPV11F (VISHAY SEMICONDUCTORS) Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 PDF資料下載
參數(shù)資料
| 型號： | BPV11F |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 |
| 中文描述： | Photodetector Transistors 15 Degree 150mW |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 104K |
| 代理商： | BPV11F |
BPV11F
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 03-May-13
1
Document Number: 81505
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon NPN Phototransistor
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1 plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
High radiant sensitivity
Daylight blocking filter matched with 940 nm
emitters
Fast response times
Angle of half sensitivity:
= ± 15°
Base terminal connected
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Detector for industrial electronic circuitry, measurement
and control
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
12784
PRODUCT SUMMARY
COMPONENT
BPV11F
I
ca
(mA)
9
(deg)
± 15
0.5
(nm)
900 to 980
ORDERING INFORMATION
ORDERING CODE
BPV11F
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
80
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
47 °C
t
5 s, 2 mm from body
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPV11 | Silicon NPN Phototransistor(檢測應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| BPV11 | Silicon NPN Phototransistor |
| BPV11 | Photo Transistor, PHOTO TRANSISTOR DETECTOR, LEAD FREE, PLASTIC PACKAGE-3 |
| BPV20F | Silicon PIN Photodiode(反向電壓60V，紅外遠距離控制應(yīng)用的PIN光二極管) |
| BPV20 | Silicon PIN Photodiode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV11F | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11F_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV20 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPV20F | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV20NFL | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。
