參數(shù)資料
型號(hào)： ATF-551M4-TR2
英文描述： Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
中文描述： 低噪聲增強(qiáng)模式偽HEMT器件的微型無(wú)鉛封裝
文件頁(yè)數(shù)： 7/24頁(yè)
文件大小： 198K
代理商： ATF-551M4-TR2
7
ATF-551M4 Typical Performance Curves
, continued
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10
mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board
requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As
an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
FREQUENCY (GHz)
G
0
6
3
1
5
4
2
30
25
20
15
10
5
-40
°
C
25
°
C
85
°
C
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[2]
.
FREQUENCY (GHz)
F
0
6
3
1
5
4
2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
°
C
25
°
C
85
°
C
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
FREQUENCY (GHz)
O
0
6
3
1
5
4
2
-40
°
C
25
°
C
85
°
C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
FREQUENCY (GHz)
I
0
6
3
1
5
4
2
-40
°
C
25
°
C
85
°
C
20
15
10
5
0
-5
-10
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
FREQUENCY (GHz)
P
0
6
3
1
5
4
2
-40
°
C
25
°
C
85
°
C
16
15
14
13
12
11
10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-58143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-58143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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