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參數資料
| 型號： | ATF-551M4-TR2 |
| 英文描述： | Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| 中文描述： | 低噪聲增強模式偽HEMT器件的微型無鉛封裝 |
| 文件頁數： | 3/24頁 |
| 文件大?。?/td> | 198K |
| 代理商： | ATF-551M4-TR2 |
3
ATF-551M4 Electrical Specifications
T
A
= 25
°
C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
0.47
0.65
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
0.37
0.53
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
μ
A
—
0.1
3
Gm
Transconductance
Vds = 2.7V, gm =
Idss/
Vgs;
Vgs = 0.75–0.7 = 0.05V
mmho
110
220
285
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
μ
A
—
—
95
NF
Noise Figure
[1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
—
—
0.5
0.5
0.9
—
Gain
Gain
[1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
15.5
—
17.5
18.0
18.5
—
OIP3
Output 3
rd
Order
Intercept Point
[1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
22
—
24.1
30.0
—
—
P1dB
1dB Compressed
Output Power
[1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
—
—
14.6
16.0
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50
Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ
_mag = 0.3
Γ
_ang = 11
°
(0.3 dB loss)
Output
Matching Circuit
Γ
_mag = 0.3
Γ
_ang = 9
°
(0.9 dB loss)
DUT
50
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure
[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
0.27
0.41
0.61
0.88
—
—
—
—
Ga
Associated Gain
[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
21.8
17.9
14.2
12.0
—
—
—
—
OIP3
Output 3
rd
Order
Intercept Point
[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
22.1
24.3
24.5
—
—
—
P1dB
1dB Compressed
Output Power
[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
14.3
14.5
14.3
—
—
—
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
ATF-551M4 Electrical Specifications
(see notes 2 and 3, as indicated)
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| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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